AUIRF2804 Datasheet, PDF (4/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF2804/S/L
10000
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10000
1000
T_TO_OP_P
V^V₁₁₁₅^G_G50VVSSV
1₈0_.V_0V
8.₇0_.V_0V
7₆.0_.0V_V
6₅.0_.5V_V
5₅.5_.0V_V
BOTTOM 45.50V
BOTTOM 4.5V
10
1
0.1
4.5V
20μs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
100
10
0.1
4.5V
20μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
TJ = 175°C
100
TJ = 25°C
10
1
4.0
VDS = 10V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
300
250
200
150
100
50
0
0
TJ = 25°C
TJ = 175°C
VDS = 10V
20μs PULSE WIDTH
40
80
120
160
200
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Typical Forward Transconductance
vs. Drain Current
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