AT25DN256 Datasheet, PDF (30/39 Pages) List of Unclassifed Manufacturers – 256-Kbit, 2.3V Minimum SPI Serial Flash Memory with Dual-Read Support

13.5 AC Characteristics – All Other Parameters
Symbol
t_EUDPD.
t_SWRST
t_CSLU
t_XUDPD
t_RDPD(1)
Parameter
Chip Select High to Ultra Deep Power-Down
Software Reset Time
Minimum Chip Select Low to Exit Ultra Deep Power-Down
Exit Ultra Deep Power-Down Time
Chip Select High to Standby Mode
2.3V to 3.6V
Min
Typ
Max
3
50
20
70
8
Notes: 1. Not 100% tested (value guaranteed by design and characterization).
2. Only applicable as a constraint for the Write Status Register command when BPL = 1.
Units
µs
µs
ns
µs
µs
13.6 Program and Erase Characteristics
Symbol
t_PP(1)
t_BP
t_PE
Parameter
Page Program Time (256 Bytes)
Byte Program Time
Page Erase Time
t_BLKE(1)
Block Erase Time
t_CHPE(1)(2)
t_OTPP(1)
t_WRSR(2)
Chip Erase Time
OTP Security Register Program Time
Write Status Register Time
Min
4 Kbytes
32 Kbytes
Note: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
2.3V-3.6V
Typ Max
1.5
3.0
8
6
25
40
50
320 400
320 400
400 950
20
40
Units
ms
µs
ms
ms
ms
µs
ms
13.7 Power-up Conditions
Symbol
t_VCSL
t_PUW
V_POR
Parameter
Minimum V_CC to Chip Select Low Time
Power-up Device Delay Before Program or Erase Allowed
Power-on Reset Voltage
Min Max Units
70
µs
5
ms
1.6
2.2
V
AT25DN256 30
DS-25DN256–039B–5/2014