SUR6020 Datasheet, PDF (3/3 Pages) List of Unclassifed Manufacturers – Ultra Fast Recovery Epitaxial Diodes

SUR6020
Ultra Fast Recovery Epitaxial Diodes
160
A
140
120
I_F
100
80
T _VJ=150°C
60
T _VJ=100°C
40
20
T _VJ=25°C
0
0.0
0.4
0.8
1.2 V
V_F
F ig. 1 F orward current I_F vers us V _F
1.6
1.4
K_f
1.2
1.0
0.8
0.6
0.4
I_{R M}
Q_r
0.8
C
Q_r
0.6
0.4
T_VJ= 100°C
V_R = 100V
I_F= 35A
I_F= 70A
I_F=140A
0.2
30
A
25
I_{R M}
T_VJ= 100°C
V_R = 100V
20
I_F= 35A
15 ^IF^{= 70A}
I_F=140A
10
5
0.0
10
100
A/ s 1000
-di_F/dt
F ig. 2 T yp. revers e recovery charge Q_r
vers us -di_F/dt
0
0 200 400 600 A8/00s 1000
-di_F/dt
F ig. 3 T yp. peak revers e current I_{R M}
vers us -di_F/dt
70
ns
60
t_{rr 50}
40
30
20
10
T_VJ= 100°C
V_R = 100V
I_F=35A
I_F=70A
I_F=140A
5
V
V_FR ⁴
t_fr
3
2
1
T_VJ= 100°C
I_F = 100A
V_FR
2.5
s
2.0
t_fr
1.5
1.0
0.5
0.2
0
40
80 120 °C 160
T_VJ
F ig. 4 Dynamic parameters Q_r, I_{R M}
vers us T _VJ
0
0 200 400 600 A8/00s
-di_F /dt
F ig. 5 T yp. recovery time t_rr
vers us -di_F/dt
1000
0
0.0
0
200 400 600 A8/ 0s0
di_F /dt
F ig. 6 T yp peak forward voltage
V _FR and t_fr vers us di_F/dt
1.0
K /W
0.8
Z_{thJ C}
0.6
0.4
0.2
0.0
0.001
0.01
0.1
1
t
F ig. 7 T rans ient thermal impedance junction to cas e
DS E I 60-02
s
10