NPT1004 Datasheet, PDF (3/6 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 45W RF Power Transistor

NPT1004
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=350mA, T_A=25°C unless otherwise noted
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
900
1500
2500
3500
Z_S (W)
2.0 + j2.7
1.6 - j0.8
2.0 - j3.2
3.2 - j6.5
Z_L (W)
6.0 + j3.3
4.5 + j0.5
3.5 - j5.0
2.9 - j8.0
P_SAT (W)
45
45
45
35
G_SS (dB)
22.5
18.5
14.0
12.0
Drain Efficiency
@ P_SAT (%)
72
70
65
60
Table 2: Optimum Source and Load Impedances for WiMAX Gain, Drain Efficiency, Output Power, and
Linearity Performance
Frequency
(MHz)
2500¹
2600¹
2700¹
3300²
3500²
3800²
Z_S (W)
2.1 - j7.6
2.3 - j7.7
2.3 - j9.0
3.3 - j11.8
3.5 - j13.5
4.5 - j16.2
Z_L (W)
3.1 - j3.9
3.3 - j4.4
3.4 - j4.7
3.7 - j7.2
3.5 - j10.0
3.7 - j11.2
P_OUT (W)
5
5
5
6.3
4.5
3.2
Gain (dB)
14.0
13.0
13.0
11.5
10.5
8.0
Drain Efficiency
(%)
27
27
27
30
25
17
Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth.
Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM.
Note 2: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth.
Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM.
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
(a) CW Impedances
(b) OFDM Impedances
Figure 1 - Optimal Impedances for CW and OFDM Performance
NPT1004
Page 3
NDS-010 Rev. 4, April 2013