TC1101 Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – Low Noise and Medium Power GaAs FETs

TC1101
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
7.0 V
V_GS
Gate-Source Voltage
-3.0 V
I_DS
Drain Current
I_DSS
I_GS
Gate Current
160 µA
P_in
RF Input Power, CW
14 dBm
P_T
Continuous Dissipation
150 mW
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 2 V, I_DS = 10 mA
Frequency NF_opt
G_A
(GHz)
(dB) (dB)
Γ_opt
MAG ANG
Rn/50
2
0.38 19.8
0.99
4
1.52
4
0.40 17.5
0.90
9
1.05
6
0.42 15.6
0.82
18
0.77
8
0.45 13.9
0.76
29
0.61
10
0.50 13.1
0.69
43
0.51
12
0.55 12.4
0.63
55
0.44
14
0.64 11.7
0.56
65
0.37
16
0.78 11.1
0.45
76
0.30
18
0.95 10.6
0.34
90
0.24
CHIP DIMENSIONS
D
S
G
S
250 ± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 60
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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