SD039-151-011 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – InGaAs Photodetector

InGaAs Photodetector
PRELIMINARY
SD039-151-011
WWW.LUNAINC.COM
OPTO-ELECTRICAL PARAMETERS
Precision – Control – Results
T_a = 23°C UNLESS NOTED OTHERWISE
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Breakdown Voltage
Spectral Range
Responsivity
Shunt Resistance
Dark Current
Capacitance
Rise Time (50Ω load)
Noise Equivalent Power
I_bias = 1 µA
−
20
-
800
-
λ= 1310 nm, Vr=5V
V_bias = 10 mV
V_bias = 5V
V_bias = 5V; f = 1 MHz
V_bias = 5V; λ= 1310 nm
V_R = 5V@ λ=1310
0.8
0.9
40
200
-
0.2
-
70
-
2.0
-
1.0x10^-14-
TYPICAL PERFORMANCE
40
1700
-
-
10
150
-
-
V
nm
A/W
MΩ
nA
pF
ns
fW/√Hz
NOISE CURRENT vs. REVERSE BIAS
DARK CURRENT vs REVERSE BIAS
1.E-12
1.E-04
1.E-05
1.E-13
1.E-06
1.E-07
1.E-08
1.E-14
1.E-09
1.E-10
1.E-11
1.E-15
1.E-03
1.E-02
1.E-01
1.E+00
Reverse Voltage (V)
1.E+01
1.E+02
SPECTRAL RESPONSE
1.E-12
1.E-03
1.E-02
1.E-01
1.E+00
Reverse Voltage [V]
1.E+01
1.E+02
CAPACITANCE vs. REVERSE BIAS
0.95
0.85
0.75
0.65
0.55
0.45
0.35
0.25
0.15
0.05
680
<
880
1080
1280
1480
1680
Wavelenght, nm
165
145
125
105
85
65
45
25
5
0
5
10
15
20
Reverse Bias [V]
Information in this technical datasheet is believed to
be correct and reliable. However, no responsibility is
assumed for possible inaccuracies or omission.
Specifications are subject to change without notice.
Page 2/2
REV 01-04-16
© 2016 Luna Optoelectronics. All rights reserved.
Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone [phone] • Fax [phone]