SD039-121-011 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – InGaAs Photodiode

InGaAs Photodiode
SD039-121-011
WWW.LUNAINC.COM
OPTO-ELECTRICAL PARAMETERS
Precision – Control – Results
T_a = 23°C unless noted otherwise
PARAMETER
TEST CONDITIONS
MIN
TYP
Breakdown Voltage
I_bias = 100 µA
Responsivity
λ= 500 nm
Shunt Resistance
V_bias = 10 mV
Dark Current
Capacitance
V_bias = 5V
V_bias = 0V; f = 1 MHz
Rise Time (50Ω load)
V_bias = 24V; λ= 826 nm
Noise Equivalent Power λ= 900 nm
Temperature Coefficient of
Shunt Resistance
10
-
TBD
-
-
-
-
-
-
-
-
180
TBD
10
TBD
TYPICAL PERFORMANCE
SPECTRAL RESPONSE
MAX
-
-
-
100
-
UNITS
V
A/W
MΩ
nA
pF
ns
10^-14W/Hz^0.5
0.95
0.85
0.75
0.65
0.55
0.45
0.35
0.25
0.15
0.05
450
650
850
1050
1250
1450
1650
Wavelenght, nm
Information in this technical datasheet is believed to
be correct and reliable. However, no responsibility is
assumed for possible inaccuracies or omission.
Specifications are subject to change without notice.
Page 2/2
REV 02-04-16
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