NPTB00004 Datasheet, PDF (2/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 5W RF Power Transistor

NPTB00004
DC Specifications: TC=25°C
Symbol Parameter
Off Characteristics
V_BDS
I_DLK
Drain-Source Breakdown Voltage
(V_GS = -8V, I_D = 2mA)
Drain-Source Leakage Current
(V_GS = -8V, V_DS = 60V)
On Characteristics
V_T
V_GSQ
R_ON
I_D
Gate Threshold Voltage
(V_DS = 28V, I_D = 2mA)
Gate Quiescent Voltage
(V_DS = 28V, I_D = 50mA)
On Resistance
(V_GS = 2V, I_D = 15mA)
Drain Current
(V_DS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, V_GS = 2V)
Min
Typ
Max
Units
100
-
-
0.5
-
V
2
mA
-2.0
-1.5
-1.0
V
-1.8
-1.3
-0.8
V
-
2.0
2.2
W
1.1
1.3
-
A
Absolute Maximum Ratings: Not simultaneous, T_C=25°C unless otherwise noted
Symbol Parameter
Max
Units
V_DS
V_GS
P_T
q_JC
T_STG
T_J
HBM
MM
MSL
Drain-Source Voltage
100
V
Gate-Source Voltage
-10 to 3
V
Total Device Power Dissipation (Derated above 25°C)
7.6
W
Thermal Resistance (Junction-to-Case)
23
°C/W
Storage Temperature Range
-65 to 150
°C
Operating Junction Temperature
200
°C
Human Body Model ESD Rating (per JESD22-A114)
1A (>250V)
Machine Model ESD Rating (per JESD22-A115)
M1(>50V)
Moisture Sensitivity Level (per IPC/JEDEC J-STD-020): Rating of 3 at 260 °C Package Peak Temperature
NPTB00004
Page 2
NDS-002 Rev 7, April 2013