MSFC90 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – Thyristor/Diode Modules

MSFC90
◆Thyristor
Maximum Ratings
Symbol
Item
I_TAV
Average On-State Current
I_TSM
Surge On-State Current
i²t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Maximum allowable acceleration
Conditions
Sine 180^o;Tc=85℃
T_VJ =45℃ t=10ms, sine
T_VJ =125℃ t=10ms, sine
T_VJ =45℃ t=10ms, sine
T_VJ =125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
To terminals(M5)
To heatsink(M6)
T_VJ= T_VJM , 2/3V_DRM ,I_G =500mA
Tr<0.5us,tp>6us
T_J=T_VJM ,2/3V_DRM linear voltage rise
Values
90
2000
1750
20000
15000
3000
-40 to +130
-40 to +125
3±15%
5±15%
150
1000
50
Units
A
A
A2s
V
℃
℃
Nm
Nm
A/us
V/us
m/s²
Thermal Characteristics
Symbol
Item
Rth(j-c) Thermal Impedance, max.
Rth(c-s) Thermal Impedance, max.
Conditions
Junction to Case
Case to Heatsink
Values
0.28
0.20
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Item
V_TM
I_RRM/I_DRM
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
V_TO
On state threshold voltage
r_T
Value of on-state
slope resistance. max
V_GT
Gate Trigger Voltage, max.
I_GT
Gate Trigger Current, max.
V_GD
Non-triggering gate voltage, max.
I_GD
Non-triggering gate current, max.
I_L
Latching current, max.
I_H
Holding current, max.
tgd
Gate controlled delay time
tq
Circuit commutated turn-off time
Conditions
T=25℃ I_T =300A
T_VJ=T_VJM ,V_R=V_RRM ,V_D=
V_DRM
For power-loss
calculations only
(T_VJ =125℃)
T_VJ =T_VJM
T_VJ =25℃ , V_D =6V
T_VJ =25℃ , V_D =6V
T_VJ=125℃,V_D =2/3V_DRM
T_VJ =125℃, V_D =2/3V_DRM
T_VJ =25℃ , R_G = 33 Ω
T_VJ =25℃ , V_D =6V
TVJ=25℃,
IG=1A, diG/dt=1A/us
T_VJ =T_VJM
Values
Min. Typ. Max.
1.72
20
0.9
2
3
150
0.25
6
300 600
150 250
1
100
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
Document Number: MSFC90
www.smsemi.com
Sep.06,2013
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