MSDT150 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – Three Phase Bridge Thyristor

MSDT150
◆Thyristor
Maximum Ratings
Symbol
Item
I_TAV
Average On-State Current
I_TSM
i²t
Visol
Tvj
Tstg
Mt
Mt
Ms
di/dt
dv/dt
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Conditions
Tc=93℃, Single Phase half wave
180^o conduction
TVJ=45℃ t=10ms (50Hz), sine
VR=0
a.c.50HZ;r.m.s.;1 min
To terminals(M4)
To terminals(M6)
To heatsink(M6)
T_VJ=T_VJM, V_D=1/2V_DRM ,I_G =100mA
d_iG/d_t=0.1A/μs
T_J=T_VJM,V_D=2/3V_DRM,linear voltage
rise
Values
150
1500
11250
3000
-40 to +125
-40 to +125
2±15%
5±15%
5±15%
150
500
Units
A
A
A²s
V
℃
℃
Nm
Nm
A/μs
V/μs
Electrical and Thermal Characteristics
Symbol
Item
V_TM
I_RRM/I_DRM
V_TO
r_T
V_GT
I_GT
V_GD
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Threshold voltage
Slope resistance
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Max. required DC gate voltage
not to trigger
Conditions
T=25℃ I_T =500A
T_VJ=T_VJM ,V_R=V_RRM ,V_D=V_DRM
T_VJ=T_VJM
T_VJ =25℃ , V_D =6V
T_VJ =25℃ , V_D =6V
T_VJ =125℃ , V_D =2/3V_DRM
Values
Min. Typ. Max.
1.80
40
0.85
1.5
3
150
0.25
I_GD
I_L
I_H
tgd
tq
Rth(j-c)
Rth(c-s)
Max. required DC gate current
not to trigger
Maximum latching current
Maximum holding current
Gate controlled delay time
Circuit commutated turn-off time
Thermal Impedance, max.
Thermal Impedance, max.
T_VJ =125℃ , V_D =2/3V_DRM
T_VJ =25℃ , R_G=33Ω
T_VJ =25℃ , V_D =6V
T_VJ=25℃,I_G=1A,di_G/dt=1A/us
T_VJ = T_VJM
Junction to Case
Case to Heatsink
10
300 1000
150 400
1
100
0.16
0.07
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
℃/W
℃/W
Document Number: MSDT150
Jan.15,2015
2
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