English
Language : 

FGH20N60SFDTU Datasheet, PDF (2/9 Pages) List of Unclassifed Manufacturers – High current capability, High input impedance
◁
Package Marking and Ordering Information
Device Marking
Device
FGH20N60SFD FGH20N60SFDTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES
∆TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 20A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 20A,
VGE = 15V
600
-
-
V
-
0.6
-
V/oC
-
-
250
µA
-
-
±400
nA
4.0
5.0
6.5
V
-
2.2
2.8
V
-
2.4
-
V
-
940
-
pF
-
110
-
pF
-
40
-
pF
-
13
-
ns
-
16
-
ns
-
90
-
ns
-
24
48
ns
-
0.37
-
mJ
-
0.16
-
mJ
-
0.53
-
mJ
-
12
-
ns
-
16
-
ns
-
95
-
ns
-
28
-
ns
-
0.4
-
mJ
-
0.28
-
mJ
-
0.69
-
mJ
-
65
-
nC
-
7
-
nC
-
33
-
nC
FGH20N60SFD Rev. A
2
www.fairchildsemi.com
 ▷