BT136-600-127 Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – Thermal resistance junction to mounting base Thermal resistance junction to ambient

Philips Semiconductors
Triacs
Product specification
BT136 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
R_{th j-mb}
R_{th j-a}
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current
I_L
Latching current
I_H
Holding current
V_T
On-state voltage
V_GT
Gate trigger voltage
I_D
Off-state leakage current
CONDITIONS
BT136-
V_D = 12 V; I_T = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V_D = 12 V; I_GT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V_D = 12 V; I_GT = 0.1 A
I_T = 5 A
V_D = 12 V; I_T = 0.1 A
V_D = 400 V; I_T = 0.1 A;
T_j = 125 ˚C
V_D = V_DRM(max);
T_j = 125 ˚C
MIN. TYP.
-
5
-
8
-
11
-
30
-
7
-
16
-
5
-
7
-
5
-
1.4
-
0.7
0.25 0.4
-
0.1
MAX.
...
...F
35
25
35
25
35
25
70
70
20
20
30
30
20
20
30
30
15
15
1.70
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dV_D/dt
dV_com/dt
t_gt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
BT136-
V_DM = 67% V_DRM(max);
T_j = 125 ˚C; exponential
waveform; gate open
circuit
V_DM = 400 V; T_j = 95 ˚C;
I_T(RMS) = 4 A;
dI_com/dt = 1.8 A/ms; gate
open circuit
I_TM = 6 A; V_D = V_DRM(max);
I_G = 0.1 A; dI_G/dt = 5 A/µs
MIN.
...
...F
100
50
-
-
-
-
TYP. MAX. UNIT
250
- V/µs
50
- V/µs
2
-
µs
June 2001
2
Rev 1.400