AUIRFR024N Datasheet, PDF (2/13 Pages) International Rectifier – Advanced Planar Technology

AUIRFR/U024N
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V V_GS = 0V, I_D = 250µA
∆V_(BR)DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
f ^{0.052 ––– V/°C Reference to 25°C, ID = 1mA}
––– 0.075 Ω V_GS = 10V, I_D = 10A
V_GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ––– 4.0
4.5 ––– –––
V
S
h ^{VDS = VGS, ID = 250µA}
V_DS = 25V, I_D = 10A
I_DSS
Drain-to-Source Leakage Current
––– ––– 25
µA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– ––– 20
I_D = 10A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– –––
––– –––
5.3
7.6
fh nC VDS = 44V
V_GS = 10V,See Fig 6 and 13
t_d(on)
Turn-On Delay Time
––– 4.9 –––
V_DD = 28V
t_r
Rise Time
––– 34 –––
I_D = 10A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
19
27
–––
–––
Ãfh ns RG = 24 Ω,
R_D = 2.6Ω, See Fig.10
L_D
Internal Drain Inductance
Between lead,
D
––– 4.5 –––
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
G
Ãg and center of die contact
S
C_iss
Input Capacitance
––– 370 –––
V_GS = 0V
C_oss
Output Capacitance
––– 140 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 65 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
g ––– ––– 17
MOSFET symbol
D
A showing the
integral reverse
G
––– ––– 68
––– ––– 1.3
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 10A, V_GS = 0V
S
–––
–––
56
83
120 180
fh ^{ns TJ = 25°C, IF = 10A}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
‚ V_DD = 25V, starting T_J = 25°C, L = 1mH, R_G = 25Ω, I_AS = 10A. (See Figure 12)
ƒ I_SD ≤ 10A, di/dt ≤ 280A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%
… This is applied for I-PAK, L_S of D-PAK is measured between lead and center of die contact .
† Uses IRFZ24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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