AUIRFP2907 Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFP2907
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
75 ––– –––
––– 0.085 –––
––– 3.6 4.5
V V_GS = 0V, I_D = 250μA
f ^{V/°C Reference to 25°C, ID = 1mA}
mΩ VGS = 10V, ID = 125A
V_GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ––– 4.0
130 ––– –––
f ^{V VDS = VGS, ID = 250μA}
S V_DS = 25V, I_D = 125A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 μA V_DS = 75V, V_GS = 0V
––– ––– 250
V_DS = 60V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 410 620
I_D = 125A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
92
140
140
210
f nC VDS = 60V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 23 –––
V_DD = 38V
t_r
Rise Time
––– 190 –––
I_D = 125A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
––– 130 –––
––– 130 –––
f ns RG = 1.2Ω
V_GS = 10V
L_D
Internal Drain Inductance
––– 5.0 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 13 –––
from package
G
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
C_oss
C_oss eff.
g ^{Output Capacitance}
Effective Output Capacitance
Diode Characteristics
––– 13000 –––
––– 2100 –––
––– 500 –––
––– 9780 –––
––– 1360 –––
––– 2320 –––
and center of die contact
S
V_GS = 0V
pF V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 60V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 60V
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
h ––– ––– 209
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– 840
integral reverse
G
––– ––– 1.3
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 125A, V_GS = 0V
f ^{––– 140 210 ns TJ = 25°C, IF = 125A}
––– 880 1320 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting T_J = 25°C, L = 0.25mH
R_G = 25Ω, I_AS = 125A. (See Figure 12).
ƒ I_SD ≤ 125A, di/dt ≤ 260A/μs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
‡ Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ˆ R_θ is measured at T_J of approximately 90°C.
2
www.irf.com