|
AUIRFN8405 Datasheet, PDF (2/11 Pages) List of Unclassifed Manufacturers – Ultra Low On-Resistance | |||
|
◁ |
AUIRFN8405
Thermal Resistance
Symbol
Rï±JC (Bottom)
Rï±JC (Top)
Rï±JA
Rï±JA (<10s)
Junction-to-Case ï
Junction-to-Case ï
Junction-to-Ambient ï
Junction-to-Ambient ï
Parameter
Typ.
âââ
âââ
âââ
âââ
Max.
1.1
30
44
28
Units
°C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
40 âââ âââ V VGS = 0V, ID = 250µA
âââ 37 âââ mV/°C Reference to 25°C, ID = 1.0mAï
âââ 1.6 2.0 mïï VGS = 10V, ID = 50A
2.2 âââ 3.9
V VDS = VGS, ID = 100µA
âââ âââ 1.0
âââ âââ 150
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
âââ âââ 100
âââ âââ -100
âââ 2.4 âââ
VGS = 20V
ïï VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
145 âââ âââ
âââ 78 117
âââ 21 âââ
âââ 25 âââ
âââ 53 âââ
S VDS = 10V, ID = 50A
ID = 50A
nC
VDS = 20V
VGS = 10V ï
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
âââ 9.5 âââ
âââ 30 âââ
âââ 58 âââ
âââ 33 âââ
âââ 5142 âââ
âââ 758 âââ
âââ 501 âââ
âââ 900 âââ
âââ 1094 âââ
VDD = 20V
ns
ID = 50A
RG = 2.7ï
VGS = 10V ï
VGS = 0V
VDS = 25V
pF Æ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V ï
VGS = 0V, VDS = 0V to 32V ï
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
âââ âââ 187ï
A
MOSFET symbol
showing the
ISM
Pulsed Source Current
(Body Diode) ï
âââ âââ 670ï
A
integral reverse
p-n junction diode.
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery ï
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
âââ 0.9 1.3 V TJ = 25°C, IS = 50A, VGS = 0V ï
âââ 5.2 âââ V/ns TJ = 175°C, IS= 50A, VDS = 40V
âââ
âââ
âââ
âââ
27
28
16
18
âââ
âââ
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 50A
di/dt = 100A/µsï
âââ 0.92 âââ A TJ = 25°C
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
November 3, 2014
|
▷ |