AUIRF3805S-7P Datasheet, PDF (2/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF3805S/L-7P
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆ΒV_DSS/∆T_J
R_DS(on) SMD
Drain-to-Source Breakdown Voltage
55 ––– ––– V V_GS = 0V, I_D = 250µA
e ^{Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C Reference to 25°C, ID = 1mA}
Static Drain-to-Source On-Resistance ––– _{2.0 2.6 mΩ} V_GS = 10V, I_D = 140A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
110 ––– ––– S V_DS = 25V, I_D = 140A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250
µA
V_DS = 55V, V_GS = 0V
V_DS = 55V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 200
––– -200
nA
V_GS = 20V
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 130 200
I_D = 140A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
53
49
–––
–––
e nC VDS = 44V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 23 –––
V_DD = 28V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 130 –––
––– 80 –––
––– 52 –––
ns
I_D = 140A
e ^{RG = 2.4Ω}
V_GS = 10V
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
Between lead,
D
––– 4.5 –––
nH
6mm (0.25in.)
from package
G
––– 7.5 –––
and center of die contact
S
C_iss
Input Capacitance
––– 7820 –––
V_GS = 0V
C_oss
Output Capacitance
––– 1260 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 610 –––
ƒ = 1.0MHz, See Fig. 5
C_oss
Output Capacitance
pF
––– 4310 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
C_oss
C_oss eff.
Output Capacitance
f Effective Output Capacitance
––– 980 –––
––– 1540 –––
V_GS = 0V, V_DS = 44V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 44V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 240
––– ––– 1000
––– ––– 1.3
MOSFET symbol
D
A ^{showing the}
integral reverse
G
e ^{p-n junction diode.}
S
V ^TJ ^{= 25°C, I}S ^{= 140A, V}GS ^{= 0V}
––– 45
––– 35
68
53
e ^{ns TJ = 25°C, IF = 140A, VDD = 28V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ This value determined from sample failure
population starting T_J = 25°C, L=0.043mH,
R_G = 25Ω, I_AS = 140A,V_GS =10V.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ C_oss eff. is a fixed capacitance that gives the same
charging time as C_oss while V_DS is rising from 0 to
80% V_DSS.
… This is applied to D²Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
† R_θ is measured at T_J of approximately 90°C.
‡ Solder mounted on IMS substrate.
ˆ Limited by T_Jmax starting T_J = 25°C, L=0.043mH,
R_G = 25Ω, I_AS = 140A,V_GS =10V.Part not recommended for
use above this value.
2
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