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AUIRF3007 Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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AUIRF3007
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75 âââ âââ V VGS = 0V, ID = 250μA
f ÎV(BR)DSS/ÎTJ Breakdown Voltage Temp. Coefficient âââ 0.084 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance âââ 10.5 12.6 mΩ VGS = 10V, ID = 48A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250μA
gfs
Forward Transconductance
180 âââ âââ S VDS = 25V, ID = 48A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 μA VDS = 75V, VGS = 0V
âââ âââ 250
VDS = 60V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
âââ 89 130
ID = 48A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ 21
âââ 30
32
45
f nC VDS = 60V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 12 âââ
VDD = 38V
tr
Rise Time
âââ 80 âââ
ID = 48A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
55
49
âââ
âââ
f ns RG = 4.6Ω
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Coss eff.
Output Capacitance
g Effective Output Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
âââ 3270 âââ
âââ 520 âââ
âââ 78 âââ
âââ 3500 âââ
âââ 340 âââ
âââ 640 âââ
and center of die contact
S
VGS = 0V
pF VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 60V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Min. Typ. Max. Units
Conditions
h âââ âââ 80
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 320
integral reverse
G
âââ âââ 1.3
f p-n junction diode.
S
V TJ = 25°C, IS = 48A, VGS = 0V
âââ
âââ
85 130
280 420
f ns TJ = 25°C, IF = 48A, VDD = 38V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
Â
Coss eff. is a fixed capacitance that gives the same charging
max. junction temperature. (See fig. 11).
time as Coss while VDS is rising from 0 to 80% VDSS .
 Starting TJ = 25°C, L = 0.24mH
RG = 25Ω, IAS = 48A, VGS=10V. (See Figure 12).
 ISD ⤠48A, di/dt ⤠330A/μs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠400μs; duty cycle ⤠2%.
Â
Â
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
TJ = 25°C, L = 0.24mH, RG = 25Ω, IAS = 48A, VGS=10V.
 Rθ is measured at TJ of approximately 90°C.
2
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