AUIRF1324 Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET

Power MOSFET

AUIRF1324
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
24
–––
–––
–––
22
1.2
––– V VGS = 0V, ID = 250µA
d _{––– mV/°C} Reference to 25°C, I_D = 5.0mA
g 1.5 _mΩ V_GS = 10V, I_D = 195A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
180 ––– ––– S VDS = 10V, ID = 195A
R_G
Internal Gate Resistance
I_DSS
Drain-to-Source Leakage Current
––– 2.3 –––
––– ––– 20
––– ––– 250
Ω
µA VDS = 24V, VGS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 160 240
I_D = 195A
–––
–––
84
49
–––
–––
g nC VDS = 12V
V_GS = 10V
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 76 –––
I_D = 195A, V_DS =0V, V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 17 –––
V_DD = 16V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 190 –––
––– 83 –––
––– 120 –––
ns ^{ID = 195A}
g ^{RG = 2.7Ω}
V_GS = 10V
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 7590 –––
––– 3440 –––
V_GS = 0V
V_DS = 24V
C_rss
Reverse Transfer Capacitance
––– 1960 –––
C_oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 4700 –––
C_oss eff. (TR) Effective Output Capacitance (Time Related) ––– 4490 –––
pF
ƒ = 1.0 MHz, See Fig. 5
i V_GS = 0V, V_DS = 0V to 19V
h V_GS = 0V, V_DS = 0V to 19V
, See Fig. 11
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Ãd ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
™ ––– ––– 353
MOSFET symbol
D
A ^{showing the}
––– ––– 1412
integral reverse
G
––– ––– 1.3
g ^{p-n junction diode.}
V TJ = 25°C, IS = 195A, VGS = 0V
S
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– 46 ––– _ns T_J = 25°C
––– 71 –––
T_J = 125°C
––– 160 ––– _nC T_J = 25°C
––– 430 –––
T_J = 125°C
V_R = 20V,
g ^{IF = 195A}
di/dt = 100A/µs
I_RRM
Reverse Recovery Current
––– 7.7 ––– A T_J = 25°C
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.014mH
R_G = 25Ω, I_AS = 195A, V_GS =10V. Part not recommended for use
above this value .
„ I_SD ≤ 195A, di/dt ≤ 450 A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C
2
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