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| 2N4401BU Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA | |||
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
IBL
Base Cutoff Current
ICEX
Collector Cutoff Current
IC = 1.0 mA, IB = 0
IC = 0.1 mA, IE = 0
IE = 0.1 mA, IC = 0
VCE = 35 V, VEB = 0.4 V
VCE = 35 V, VEB = 0.4 V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hie
Input Impedance
hre
Voltage Feedback Ratio
hfe
Small-Signal Current Gain
hoe
Output Admittance
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%
VCC = 30 V, VEB = 2 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA
IB1 = IB2 = 15 mA
40
V
60
V
6.0
V
0.1
µA
0.1
µA
20
40
80
100
300
40
0.4
V
0.75
V
0.75
0.95
V
1.2
V
250
MHz
6.5
pF
3
30
pF
1.0
15
kâ¦
0.1
8.0
x 10-4
40
500
1.0
30
µmhos
15
ns
20
ns
225
ns
30
ns
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