IS42S16400J-7TLI Datasheet, PDF (14/60 Pages) List of Unclassifed Manufacturers – 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16400J
IS45S16400J
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameters
VDD max
Maximum Supply Voltage
VDDq max
Maximum Supply Voltage for Output Buffer
Vin
Input Voltage
Vout
Output Voltage
Pd max
Allowable Power Dissipation
Ics Output Shorted Current
Topr
Operating Temperature



Com.
Ind.
A1
A2
Tstg
Storage Temperature
Rating
–1.0 to +4.6
–1.0 to +4.6
–1.0 to Vddq + 0.5
–1.0 to Vddq + 0.5
1
50
0 to +70
-40 to +85
-40 to +85
-40 to +105
–65 to +150
Unit
V
V
V
V
W
mA
°C
°C
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS⁽²⁾
(At Ta = 0 to +70°C for commercial grade. Ta = -40 to +85°C for industrial and A1 grade.Ta = -40 to +105°C for A2 grade)
Symbol
VDD, VDDq
Vih
Vil
Parameter
Supply Voltage
Input High Voltage⁽³⁾
Input Low Voltage⁽⁴⁾
Min.
3.0
2.0
-0.3
Typ.
3.3
—
—
Max.
3.6
Vdd + 0.3
+0.8
Unit
V
V
V
CAPACITANCE CHARACTERISTICS^(1,2) (At Ta = 0 to +25°C, Vdd = Vddq = 3.3 ± 0.3V, f = 1 MHz)
Symbol Parameter
Typ. Max. Unit
Cin
Input Capacitance: Address and Control
—
3.8
pF
Cclk
Input Capacitance: (CLK)
—
3.5
pF
CI/O
Data Input/Output Capacitance: I/O0-I/O15
—
6.5
pF
Notes:
1.  Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2.  All voltages are referenced to GND.
3.Vih(max) = Vddq + 1.2V with a pulse width < 3ns.
4.Vil(min) = GND - 1.2V with a pulse width < 3ns.
THERMAL RESISTANCE
Package
Substrate
Alloy42 TSOP2(54)
Copper TSOP2(54)
BGA(54)
BGA(60)
4-layer
4-layer
4-layer
4-layer
Theta-ja
(Airflow = 0m/s)
88.0
51.7
50.5
48.3
Theta-ja
(Airflow = 1m/s)
81
49.0
44.6
42.3
Theta-ja
(Airflow = 2m/s)
77.4
47.7
41.7
41
Theta-jc
16.1
11.9
11.3
7.5
Units
C/W
C/W
C/W
C/W
14
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
12/17/2013