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AT25DF321A_10 Datasheet, PDF (13/52 Pages) ATMEL Corporation – 32-Mbit 2.7V Minimum Serial Peripheral Interface Serial Flash Memory
Atmel AT25DF321A
Figure 8-4. Dual-Input Page Program
CS
SCK
SI
0 1 2 3 4 5 6 7 8 9 10 11 12
29 30 31 32 33 34 35 36 37 38 39
OPCODE
ADDRESS BITS A23-A0
INPUT
INPUT
DATA BYTE 1 DATA BYTE 2
1 0 1 0 0 0 1 0AAAAAA
MSB
MSB
A A A D6 D4 D2 D0 D6 D4 D2 D0
INPUT
DATA BYTE n
D6 D4 D2 D0
SOI
HIGH-IMPEDANCE
D7 D5 D3 D1 D7 D5 D3 D1
MSB
MSB
D7 D5 D3 D1
MSB
8.3 Block Erase
A block of 4-, 32-, or 64-Kbytes can be erased (all bits set to the logical “1” state) in a single operation by using one of
three different opcodes for the Block Erase command. An opcode of 20h is used for a 4-Kbyte erase, an opcode of 52h is
used for a 32-Kbyte erase, and an opcode of D8h is used for a 64-Kbyte erase. Before a Block Erase command can be
started, the Write Enable command must have been previously issued to the device to set the WEL bit of the Status
Register to a logical “1” state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h, 52h, or D8h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes specifying an address within the 4-
, 32-, or 64-Kbyte block to be erased must be clocked in. Any additional data clocked into the device will be ignored. When
the CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is internally self-timed and
should take place in a time of tBLKE.
Since the Block Erase command erases a region of bytes, the lower order address bits do not need to be decoded by the
device. Therefore, for a 4-Kbyte erase, address bits A11-A0 will be ignored by the device and their values can be either a
logical “1” or “0”. For a 32-Kbyte erase, address bits A14-A0 will be ignored, and for a 64-Kbyte erase, address bits
A15-A0 will be ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deasserted, and the CS pin must be
deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and no erase
operation will be performed.
If the address specified by A23-A0 points to a memory location within a sector that is in the protected or locked down
state, then the Block Erase command will not be executed, and the device will return to the idle state once the CS pin has
been deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle aborts due to an incomplete
address being sent, the CS pin being deasserted on uneven byte boundaries, or because a memory location within the
region to be erased is protected or locked down.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device is
busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBLKE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If an
erase error occurs, it will be indicated by the EPE bit in the Status Register.
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3686D–DFLASH–12/09