WPX Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Bipolar Process

WPX
Bipolar Process
Data Sheet DS00111 / June 2010
WPX is a versatile low capacitance linear bipolar process providing
excellent functionality at low cost. Features such as high value poly
resistors, nitride capacitors, Schottky and Zener diodes and two layer
metal allow low current circuits to be built with high packing densities,
Key parameters (minimum geometry device)
NPN
fT
5 GHz at Ic=0.3 mA, Vce=2V
CJC
8 fF
CJE
10fF
Bvceo
18V
Applications
• Linear applications
• DC to DC converters
• Switching regulators
• Power management
Key Process Features
• High speed NPN transistors
• Lateral PNP transistors
• 0.9 fF/sq µm MIS capacitor (optional)
• 3 resistors including HV polysilicon
• Schottky Diodes V_f=0.5V
• Zener Diodes BVz=5.3 V (optional)
• High packing density
• Very low leakage currents
npn cross section
LOCOS
Emitter
Base
Collector
LOCOS
npn parameters (1.5 x 1.5 um emitter)
parameter Condition
Value
fT
Vce=2V
5
HFE
Ic=10μA Vce=2V 85
VAF
70
BVCEO Ic=1μA
>18
BVCBO Ic=5μA
>30
CJE
Vbe=0
10
CJC
Vbc=0
8
CJS
Vcs=0
97
Units
GHz
V
V
V
fF
fF
fF
Lateral pnp parameters
parameter Condition
fT
Vce=2V
HFE
Ic=10μA Vcb=0V
VAF
BVCEO Ic=1μA
Value
100
60
20
>18
Units
MHz
V
V
Resistor Values
parameter Value
Poly
3.2 ± 0.5
Base
550 ± 50
PR
67.5 ± 7.5
Units
kΩ
Ω
Ω
IS
Epitaxy (n-)
DC
IS
BP
BP
BN
Substrate (p-)
Minimum geometry npn fT curve
6.0
5.0
4.0
fT (GHz) 3.0
2.0
1.0
0.0
1.E-06
1.E-05
1.E-04
IC (A)
1.E-03
1.E-02
Vce=2V
Design Rules
Feature
Emitter
Poly (EP) resistor
Base and PR
resistor
Contact
1st Layer metal
2^nd layer metal
Min μm
1.0 x 2.5
or
1.5 x 1.5
1.5
3.0
Spacing μm
2.0
1.5
1.0 x 2.5
or
1.5 x 1.5
2.0
2.0
4.0
3.0
Data Sheet DS00111 /June 2010
Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty
as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .
While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of
such Information.
All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .
Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ
Tel: [phone]
Fax: [phone]
Web: www.plesseysemiconductors.com