WPC Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Bipolar Process

WPC
Bipolar Process
Data Sheet DS00109 / June 2010
WPC is a versatile RF bipolar process providing excellent RF functionality
at low cost. Features such as high value poly resistors, nitride capacitors
and two layer metal allow low current circuits to be built with high packing
densities,
Key parameters (minimum geometry device)
NPN
fT
7 GHz at Ic=0.4 mA, Vce=2V
CJC
10 fF
CJE
14fF
Bvceo
6V
Propagation 125 ps
Delay
Applications
• Low current circuits
• Synthesizers
• Pagers
Key Process Feature
• 1.8nF/sq μm MIS capacitors
• High value polysilicon resistor
• Very low leakage currents
• Low flicker noise
npn parameters (1.5 x 1.5 um emitter)
parameter Condition
Value
fT
Ic=0.3mA Vce=2V 7
HFE
Ic=10μA Vce=2V 100
VAF
30
BVCEO Ic=1μA
>13.5
BVCBO Ic=5μA
>6
CJE
Vbe=0
14
CJC
Vbc=0
10
CJS
Vcs=0
17
Units
GHz
V
V
V
fF
fF
fF
Lateral pnp parameters
parameter Condition
fT
Vce=2V
HFE
Ic=10μA Vcb=0V
VAF
BVCEO Ic=1μA
Value
100
60
17
>6
Units
MHz
V
V
npn cross section
LOCOS
IS
BP
Emitter
Epitaxy (n-)
Base
BN
Collector
DC
LOCOS
IS
BP
Resistor Values
parameter Value
Poly
3.2 ± 0.5
Base
550 ± 50
PR
67.5 ± 7.5
Units
kΩ
Ω
Ω
Substrate (p-)
Minimum geometry npn fT curve
8.0
6.0
fT (GHz) 4.0
2.0
0.0
1.E-06
1.E-05
1.E-04
IC (A)
1.E-03
1.E-02
Vce=2V
Design Rules
Feature
Emitter
Poly (EP) resistor
Base and PR
resistor
Contact
1st Layer metal
2^nd layer metal
Min μm
1.0 x 2.5
or
1.5 x 1.5
1.5
3.0
Spacing μm
2.0
1.5
1.0 x 2.5
or
1.5 x 1.5
2.0
2.0
2.0
2.0
Data Sheet DS00109 / June 2010
Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty
as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .
While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of
such Information.
All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .
Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ
Tel: [phone]
Fax: [phone]
Web: www.plesseysemiconductors.com