VTT7222H Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Low-cost visible and near-IR photodetection

Phototransistors
phototransistors
Features
• Low-cost visible and near-IR
photodetection
• Available with gains from 100
to over 1500
• Moderately fast response times
• Available in a wide range of
packages including epoxy-coated,
transfer-molded, cast, hermetic
packages, chip form and surface
mounting technology
• Usable with almost any visible
or near-infrared light source such
as IREDs, neon, fluorescent,
incandescent bulbs, lasers, flame
sources, sunlight, etc.
• Same general electrical
characteristics as familiar signal
transistors
Typical Applications
• Computer/business equipment
• Write-protect control
• Margin controls—printers
• Industrial
• LED light source—light pens
• Security systems
• Safety shields
• Consumer
• Coin counters
• Lottery card readers
• Position sensors—joysticks
• Remote controllers—toys,
appliances, audio/visual
equipment
• Games—laser tag
• Camera shutter control
Principle of Operation
Phototransistors are solid-state light
detectors that possess internal gain.
They can be used to provide either
an analog or digital output signal.
Datasheets available upon request.
Description
Phototransistors are photodiode-amplifier combinations
integrated within a single silicon chip. These are combined to
overcome the major fault of photodiodes: unity gain. Many
applications demand a greater output signal from the photodetector
than can be generated by a photodiode alone. While the signal
from a photodiode can always be amplified through use of an
external op-amp or other circuitry, this approach is often not as
practical or as cost-effective as the use of phototransistors. The
phototransistor can be viewed as a photodiode whose output
photocurrent is fed into the base of a conventional small-signal
transistor. While not required for operation of the device as a
photodetector, a base connection is often provided, allowing the
designer the option of using base current to bias the transistor. The
typical gain of a phototransistor can range from 100 to over 1500.
Phototransistors can be used as ambient-light detectors. When
used with a controllable light source, typically an IRED, they
are often employed as the detector element for optoisolators and
transmissive or reflective optical switches.
All phototransistors are RoHS compliant.
Absolute Maximum Ratings
Maximum Temperatures
-25°C to 80°C (CR10TE, CR50TE)
Storage and Operating:
-40°C to 100°C
-40°C to 110°C (VTT1015, VTT1016,
VTT1017, VTT1115, VTT1116, and VTT1117)
-40°C to 85°C (VTT7222, VTT7223,
VTT7225, VTT7122, VTT7123, and VTT7125)
-40°C to 70°C (VTT9002, VTT9003,
VTT9102, and VTT9103)
Continuous Power Dissipation: 50 mW
100 mW (VTT9002, VTT9003, VTT9102,
and VTT9103)
200 mW (CR10TE, CR50TE)
250 mW (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
Derate above 30°C:
0.71 mW/˚C
2.5 mW/˚C (VTT9002, VTT9003, VTT9102,
and VTT9103)
3.12 mW/˚C (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
0.91 mW/˚C (VTT7122, VTT7123, VTT7125)
Maximum Current:
25 mA
200 mA (VTT1015, VTT1016, VTT1017,
VTT1115, VTT1116, and VTT1117)
Lead-Soldering Temperature: 260°C (1.6 mm from case, 5 sec. max.)
www.optoelectronics.perkinelmer.com 19