TIP120 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W)

TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Features:
• Designed for general-purpose amplifier and low speed switching applications.
• Collector-Emitter sustaining voltage-V_CEO(sus) = 60V (Minimum) - TIP120, TIP125
80V (Minimum) - TIP121, TIP126
100V (Minimum) - TIP122, TIP127.
• Collector-Emitter saturation voltage-V_CE(sat) = 2.0V (Maximum) at I_C = 3.0A.
• Monolithic construction with built-in-base-emitter shunt resistors.
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
-Peak
Base Current
Total Power Dissipation at T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
P_D
T_J, T_STG
Minimum Maximum
14.68
15.31
9.78
10.42
5.01
6.52
13.06
14.62
3.57
4.07
2.42
3.66
1.12
1.36
0.72
0.96
4.22
4.98
1.14
1.38
2.20
2.97
0.33
0.55
2.48
2.98
3.70
3.90
Dimensions : Millimetres
TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
60
80
100
5.0
5.0
8.0
120
65
0.52
-65 to +150
NPN
TIP120
TIP121
TIP122
PNP
TIP 125
TIP 126
TIP 127
5.0 Ampere
Darlington
Complementary Silicon
Power Transistors
60 - 100 Volts
65 Watts
TO-220
Unit
V
A
mA
W
W/°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
1.92
Unit
°C/W
Page 1
30/05/05 V1.0