TC2182 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Low Noise Ceramic Packaged PHEMT GaAs FETs

TRANSCOM
TC2182
January 2002
Low Noise Ceramic Packaged PHEMT GaAs FETs
FEATURES
• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain:
Ga = 13 dB Typical at 12 GHz
• Lg = 0.25 µm, Wg = 160 µm
• 100 % DC Tested
• Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with
TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that
makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure
consistent quality.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
NF
Noise Figure at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
G_a
Associated Gain at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
I_DSS
g_m
V_P
BV_DGO
R_th
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 0.32mA
Drain-Gate Breakdown Voltage at I_DGO = 0.08mA
Thermal Resistance
MIN
10
-0.5
5
TYP
0.5
13
40
55
-1.0
9
130
MAX
0.7
-2.0
UNIT
dB
dB
mA
mS
Volts
Volts
°C/W
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_DS
Drain Current
I_GS
Gate Current
5.0 V
-3.0 V
I_DSS
160 µA
P_in
RF Input Power, CW
14 dBm
P_T
Continuous Dissipation
150 mW
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 2 V, I_DS = 10 mA
Frequency
(GHz)
NF_opt
(dB)
G_A
(dB)
Γ_opt
MAG ANG
Rn/50
2
0.32
19.0
0.98
15
0.40
4
0.33
17.4
0.84
30
0.35
6
0.35
15.7
0.68
50
0.26
8
0.39
14.3
0.51
76
0.19
10
0.44
12.9
0.38
107
0.12
12
0.50
11.9
0.28
146
0.08
14
0.58
11.4
0.25 -167 0.07
16
0.74
11.2
0.32 -110 0.11
18
0.91
10.9
0.49
-43
0.23
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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