STP2301_V1 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – P Channel Enhancement Mode MOSFET

STP2301
P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
The STP2301 is the P-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
-20V/-2.8A, R_DS(ON) = 90m-ohm (Typ.)
@VGS = -4.5V
-20V/-2.0A, R_DS(ON) = 110m-ohm
@VGS = -2.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
S01YA
1
2
Y: Year Code A: Process Code
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2301 2007. V1