ST3400S23RG_V2 Datasheet, PDF(1/6 Page) List of Unclassifed Manufacturers

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ST3400S23RG_V2 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N Channel Enhancement Mode MOSFET

ST3400S23RG

N Channel Enhancement Mode MOSFET

5.8A

DESCRIPTION

The ST3400S23RG is the N-Channel logic enhancement mode power field effect

transistor is

produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance. These

devices are particularly suited for low voltage application such as cellular phone and

notebook computer power management and other battery powered circuits where high

side switching.

PIN CONFIGURATION

SOT-23-3L

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23-3L

A0YA

Y: Year Code A: Week Code

FEATURE

30V/5.8A, RDS(ON) = 28mâ¦ (Typ.)

@VGS = 10V

30V/4.8A, RDS(ON) = 33mâ¦

@VGS = 4.5V

30V/4.0A, RDS(ON) = 40mâ¦

@VGS = 2.5V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23-3L package design

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stnasontech.com

STN3400S23RG 2006. V1

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