ST2306SRG_V1 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N Channel Enhancement Mode MOSFET

ST2306SRG
N Channel Enhancement Mode MOSFET
3.2A
DESCRIPTION
ST2306SRG is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
FEATURE
30V/3.2A, R_DS(ON) = 45m-ohm (Typ.)
@VGS = 10.0V
30V/2.0A, R_DS(ON) = 62m-ohm
@VGS = 4.5V
30V/1.5A, R_DS(ON) =92 m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
04YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
ST2306SRG
SOT-23
※ Process Code : A ~ Z ; a ~ z
Part Marking
04YA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2306SRG 2005. V1