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ST2300SRG_V2 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – N Channel Enhancement Mode MOSFET
ST2300SRG
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss
are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
FEATURE
20V/6.0A, RDS(ON) = 35mΩ (Typ.)
@VGS = 10V
20V/5.0A, RDS(ON) = 48mΩ
@VGS = 4.5V
20V/4.5A, RDS(ON) = 90mΩ
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
Maximum DC current capability
SOT-23 package design
PART MARKING
SOT-23
3
42YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
ST2300SRG
SOT-23
※ Process Code : A ~ Z ; a ~ z
※ ST2300SRG ; S : SOT23 R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Part Marking
42YA
ST2300SRG 2005. V1