SSM4502GM Datasheet, PDF (1/13 Pages) List of Unclassifed Manufacturers – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4502GM
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance
DESCRIPTION
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
N-CH
P-CH
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
The SO-8 package is widly preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D1
20V
18mΩ
8.3A
-20V
45mΩ
-5A
D2
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
G1
G2
S1
S2
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Rating
N-channel P-channel
20
-20
±12
±12
8.3
-5
6.5
-4
30
-20
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Value
62.5
Unit
℃/W
02/13/2008 Rev.1.00
www.SiliconStandard.com
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