S85JR Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1600 V V_RRM
S85B thru S85JR
V_RRM = 100 V - 1600 V
I_F =85 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S85B (R) S85D (R) S85G (R) S85J (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_C ≤ 140 °C
T_C = 25 °C, t_p = 8.3 ms
100
70
100
85
1800
200
140
200
85
1800
400
600
V
280
420
V
400
600
V
85
85
A
1800
1800
A
Operating temperature
T_j
Storage temperature
T_stg
-65 to 180 -65 to 180 -65 to 180 -65 to 180 °C
-65 to 180 -65 to 180 -65 to 180 -65 to 180 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V_F
I_R
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
Conditions
I_F = 85 A, T_j = 25 °C
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 180 °C
S85B (R)
1.1
10
15
0.65
S85D (R)
1.1
10
15
0.65
S85G (R)
1.1
10
15
S85J (R)
1.1
10
9
0.65
0.65
Unit
V
μA
mA
°C/W
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