RMSW220D Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SPDT DC to 40 GHz, RF - MEMS

SPDT
DC to 40 GHz, RF – MEMS
FEATURES
■ High Isolation (20 dB typical @10 GHz)
Gate 1
■ Low Insertion Loss (0.4 dB typical @10 GHz)
■ Typical On Resistance < 3.0 Ω
■ Hermetically Sealed
Gate 2
■ Long Life (>10¹¹ cycles) Electrostatic Actuation, High Off Resis-
tance (>1 GΩ), Fast Switching (5 µs), Current Handling (400
mA) ±100V Signal Range, Near Zero Harmonic Distortion, No
Quiescent Power Dissipation
Drain 1
Drain 2
Drain
Source
RMSW 220D™
DESCRIPTION
RF Input Parameters
The RMSW220D™ is a Single Pole _Frequency
2 GHz
5 GHz
10 GHz 25 GHz 35 GHz
Double Throw (SPDT) Reflective RF
Switch utilizing Radant MEMS Inc. Insertion Loss
< 0.3 dB < 0.4 dB < 0.5 dB < 0.6 dB < 0.8 dB
recent breakthrough technology
that delivers high-linearity, high- ^Isolation
> 32 dB > 25 dB > 20 dB > 17 dB > 13 dB
isolation and low-insertion loss in a _{Return Loss}
wafer-scale package.
Input IP3 (Two-tone
< -20 dB < -20 dB < -19 dB < -18 dB < -16 dB
inputs 10 GHz and
This device is ideally suited for use 10.001 GHz @ 27 dBm)
> 65 dBm
in many applications such as wire-
RF Power Rating
less (i.e. handsets, WLAN, broad-
30 dBm
band wireless access, GPS receiv- ^{Active Life Cycle,}
10¹¹
ers), RF and Microwave Multi-throw ^{(cold-Switched)}
switches, Radar Beam Steering An- _{Notes: Product performance specifications and switch operation are for cold switching only.}
tennas, Phase shifters, and RF Test Hot switching with RF input power greater than –10 dBm can degrade lifetime of switch.
Equipment.
DC Input Parameters
Functional Block Diagram
Source
Drain
Gate
Drain
Gate
Actuation Voltage, typ.
Actuation Power Consumption
Switch Current, Max. (Cold)
Switch Current, Max. (Hot)
Switching Time, Max.
(10kHz, Varies with Control Voltage)
Operating Temperatures
Storage Temperatures
90
2µW @ 1 kHz switching rate
250 mA
50 mA
5 µs
- 40 ̊C to 85 ̊C
- 55 ̊C to 150 ̊C
255 Hudson Road, Stow, MA01775 ● Tel: [phone] ● Fax: [phone] ● Email: [e-mail]