PA102FMG Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – P-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
PA102FMG
SOT-23
Lead-Free
PRODUCT SUMMARY
V_(BR)DSS
R_DS(ON)
I_D
-20
118m
-3A
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 70 °C
Power Dissipation
T_C = 25 °C
T_C = 70 °C
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
1 :GATE
2 :DRAIN
3 :SOURCE
LIMITS
-20
±12
-3
-1.4
-10
1.25
0.8
-55 to 150
MAXIMUM
UNITS
V
V
A
W
°C
UNITS
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
166
°C / W
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
V_GS = 0V, I_D = -250µA
V_DS = V_GS, I_D = -250µA
V_DS = 0V, V_GS = ±12V
V_DS = -16V, V_GS = 0V
V_DS = -16V, V_GS = 0V, T_J = 125 °C
-20
-0.45 -0.8
V
-1.2
±100 nA
-1
µA
-10
On-State Drain Current¹
Drain-Source On-State Resistance¹
I_D(ON)
R_DS(ON)
Forward Transconductance¹
g_fs
V_DS = -5V, V_GS = -4.5V
V_GS = -2.5V, I_D =-1A
V_GS = -4.5V, I_D = -2A
V_GS = -10V, I_D = -2A
V_DS = -5V, I_D = -2A
-6
A
150 215
m
98 118
72 85
16
S
Mar-25-2005
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