P6803NAG Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – N- & P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6803NAG
TSOP-6
Lead-Free
PRODUCT SUMMARY
V_(BR)DSS R_DS(ON)
N-Channel 30 68mƸ
P-Channel -30 145mƸ
I_D
3.5A
-2A
D1
G1
S1
D2
G2
S2
D1 S1 D2
6 54
1 23
G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 70 °C
Power Dissipation
T_C = 25 °C
T_C = 70 °C
Junction & Storage Temperature Range
Lead Temperature (¹/₁₆” from case for 10 sec.)
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
T_L
N-Channel P-Channel UNITS
30
-30
V
±20
±20
V
3.5
-2.3
2.8
-1.8
A
10
-10
1.15
W
0.73
-55 to 150
°C
275
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient tÙ5sec
R_θJA
Junction-to-Ambient Steady State
R_θJA
Junction-to-Lead
Steady State
R_θJL
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
TYPICAL
MAXIMUM
110
150
80
UNITS
°C / W
°C / W
°C / W
1
MAR-09-2006