P5506NVG Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – N- & P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P5506NVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V_(BR)DSS R_DS(ON)
N-Channel 60 55mƸ
P-Channel -55 80mƸ
I_D
4.5A
-3.5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 70 °C
Power Dissipation
T_C = 25 °C
T_C = 70 °C
Junction & Storage Temperature Range
Lead Temperature (¹/₁₆” from case for 10 sec.)
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
T_L
N-Channel P-Channel UNITS
60
-55
V
±20
±20
V
4.5
-3.5
4
-3
A
20
-20
2
W
1.3
-55 to 150
°C
275
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
TYPICAL
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V_(BR)DSS
Gate Threshold Voltage
V_GS(th)
Gate-Body Leakage
I_GSS
STATIC
V_GS = 0V, I_D = 250µA
V_GS = 0V, I_D = -250µA
V_DS = V_GS, I_D = 250µA
V_DS = V_GS, I_D = -250µA
V_DS = 0V, V_GS = ±20V
V_DS = 0V, V_GS = ±20V
MAXIMUM
62.5
UNITS
°C / W
LIMITS
UNIT
MIN TYP MAX
N-Ch 60
P-Ch -55
V
N-Ch 1.0 1.5 2.5
P-Ch -1.0 -1.5 -2.5
N-Ch
P-Ch
±100
nA
±100
1
AUG-17-2004