P4404EDG Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – P-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary )

NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor ( Preliminary )
P4404EDG
TO-252(DPAK)
Lead-Free
PRODUCT SUMMARY
V_(BR)DSS
R_DS(ON)
-40V
44m
I_D
-10A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 70 °C
Power Dissipation
T_C = 25 °C
T_C = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (¹/₁₆” from case for 10 sec.)
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
T_L
TYPICAL
LIMITS
-40
±20
-10
-8
-32
30
20
-55 to 150
275
MAXIMUM
UNITS
V
V
A
W
°C
UNITS
Junction-to-Case
R_θJc
4.1
°C / W
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
80
°C / W
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
V_GS = 0V, I_D = -250µA
V_DS = V_GS, I_D = -250µA
V_DS = 0V, V_GS = ±20V
V_DS = -32V, V_GS = 0V
V_DS = -30V, V_GS = 0V, T_J = 125 °C
-40
V
-1 -1.8 -3.0
±250 nA
1
µA
10
On-State Drain Current¹
Drain-Source On-State Resistance¹
I_D(ON)
R_DS(ON)
V_DS = -5V, V_GS = -10V
V_GS = -4.5V, I_D = -8A
V_GS = -10V, I_D = -10A
-32
57
38
A
68
m
44
JAN-17-2005
1