P2804ND5G Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary

NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
P2804ND5G
TO-252-5
Lead-Free
PRODUCT SUMMARY
V_(BR)DSS R_DS(ON)
N-Channel 40 28mƸ
P-Channel -40 55mƸ
I_D
7A
-5.5A
D1
G1
S1
D2
G2
S2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 70 °C
Power Dissipation
T_C = 25 °C
T_C = 70 °C
Junction & Storage Temperature Range
Lead Temperature (¹/₁₆” from case for 10 sec.)
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
T_L
N-Channel P-Channel UNITS
40
-40
V
±20
±20
V
7
-5.5
6
-4.5
A
50
-50
3
W
2.1
-55 to 150
°C
275
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
R_θJC
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
2_{Duty cycle ≤ 1%}
TYPICAL
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V_(BR)DSS
Gate Threshold Voltage
V_GS(th)
Gate-Body Leakage
I_GSS
STATIC
V_GS = 0V, I_D = 250µA
V_GS = 0V, I_D = -250µA
V_DS = V_GS, I_D = 250µA
V_DS = V_GS, I_D = -250µA
V_DS = 0V, V_GS = ±20V
V_DS = 0V, V_GS = ±20V
MAXIMUM
6
42
UNITS
°C / W
°C / W
LIMITS
UNIT
MIN TYP MAX
N-Ch 40
P-Ch -40
V
N-Ch 1.0 1.5 2.5
P-Ch -1.0 -1.5 -2.5
N-Ch
P-Ch
±100
nA
±100
1
Apr-18-2005