OPE5T87 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed GaAlAs Infrared Emitter

High Speed GaAlAs Infrared Emitter C
OPE5T87
C
The OPE5T87 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS (Unit : mm)
FEATURES
• Ultra high-speed : 25ns rise time
• 880nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2- 0.5
2.54
Cathode
Anode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGSC C
C
CCCCCCCCCCCCCCCCC(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
P_DC
150
C
Forward current
I_FC
100
EC
Pulse forward current ^CCCCCC
1 _{Reverse voltage}
I_FPC
V_RC
1.0
4.0
AC
C
Operating temp.
Topr.
-25~ +85
°CC
Soldering temp. ^{CCCCCCCCCCCCCCCÊ­2} Tsol.
260.
°CC
Ê­1_{.Duty ratio = 1/100, pulse width=0.1ms.}
Ê­2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol Conditions Min.
Forward voltage
Reverse current
Capacitance
V_FC
I_F=50 EC
I_RC
V_R=4VC
C
Ct
f=1 C
C
Radiant intensity
Peak emission wavelength
Ie
I_F=50 EC
50
p^C
I_F=50 EC
C
Spectral bandwidth 50%
Half angle
C
I_F=50 C
C

I_F=50 C
C
Optical rise & fall time(10%~90%)
tr/tf
I_F=50 C
C
Cut off frequency
*3
fc
*3_{. 10logPo(fc MHz)/Po(0.1 MHz)=-3}
I_FʺʲD ECEEC
ʮDD EC ʰ C
C
C
15
Typ.
1.5
C
20
120
880
45
±8
25/15
14
(Ta=25°C)
Max. Unit
2.0
V
10
µEC
C
C
/
C
C
C
C
C
deg.
C
ns
C
MHz