OPE5985 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Speed GaAlAs Infrared Emitter

High Speed GaAlAs Infrared Emitter
OPE5985
The OPE5985 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS (Unit : mm)
3.0
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
2- 0.5
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
P_DC
80
Forward current
I_FC
60
Pulse forward current ^CCCCCC
I_FPC
0.5
Reverse voltage
V_RC
5.0
Operating temp.
Topr.
-20~ +70
Soldering temp. ^{CCCCCCCCCCCCCCCÊ­2} Tsol.
240.
Ê­1_{.Duty ratio = 1/100, pulse width=0.1ms.}
Ê­2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
(Ta=25)
Unit
C
EC
AC
C
°CC
°CC
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol Conditions Min.
Forward voltage
Reverse current
Capacitance
V_FC
I_F=50 EC
I_RC
V_R=5VC
C
Ct
f=1 C
C
EC
15
Radiant intensity
Ie
I_F=50 E _{B Rank 40}
C Rank 55
Peak emission wavelength
p^C
I_F=50 EC
C
Spectral bandwidth 50%
Half angle
C
I_F=50 C
C

I_F=40 C
C
Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3
fc
*3_{. 10logPo(fc MHz)/Po(0.1 MHz)=-3}
I_F=50 C
C
I_FʺʲD ECEEC
ʮDD EC ʰ C
C
Typ.
1.5
C
20
~
~
~
850
45
±25
25/13
14
(Ta=25)
Max. Unit
2.0
V
10
µEC
C
DDC
ʲʲC
/
C
C
C
C
C
C
deg.
C
ns
C
MHz
11