OPE5194 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – GaAs Infrared Emitter

GaAs Infrared Emitter C
OPE5194
C
The OPE5194 is GaAs infrared emitting diode
that is designed for low forward voltage and
high reliability. This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame.
DIMENSIONS (Unit : mm)
FEATURESC
• High-output powerC
• Narrow beam angle
• High reliability
• Available for pulse operating
• Low cost
C
APPLICATIONSC
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
2- 0.5
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGSC C
C
CCCCCCCCCCCCCCCCC(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
P_DC
150
C
Forward current
I_FC
100
EC
Pulse forward current ^CCCCCC
1 _{Reverse voltage}
I_FPC
V_RC
1.0
5.0
AC
C
Operating temp.
Topr.
-25~ +85
°CC
Soldering temp. ^{CCCCCCCCCCCCCCCÊ­2} Tsol.
260.
°CC
Ê­1_{.Duty ratio = 1/100, pulse width=0.1ms.}
Ê­2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol
Forward voltage
V_F
Reverse current
I_R
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p
Spectral bandwidth 50%
Half angle

C
C
Conditions
I_F =100mA
V_R= 5V
f = 1MHz
I_F=100mA
I_F= 50mA
I_F= 50mA
I_F=100mA
21
(Ta=25°C)
Min. Typ. Max. Unit
1.4
1.7
V
10
µA
20
pF
55
mW/
940
nm
45
nm
±10
deg.