MT2301 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – High performance trench technology for extremely low RDS(ON)

MOS-TECH Semiconductor Co.,LTD
MT2301
Single P-Channel Power MOSFET
General Description
This P-Channel Power MOSFET is pro duced
using MOS-TECH Semiconductor’s advanced
PowerTrench process that has b een especially tailored
to minimize the on-state r esistance and yet maintain
low gate charge for superior switching performance.
These devices a re well suit ed for portable electronics
applications: load s witching and power management,
battery charging circuits and DC/DC conversion.
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Features
• –3.3 A, –20 V. R_DS(ON) = 0.072 Ω @ V_GS = –4.5 V
R_DS(ON) = 0.096Ω @ V_GS = –2.5 V
• Low gate charge (3.6 nC typical)
• High performance trench technology for extremely
low R_DS(ON)
• SuperSOT^TM -23 provides low R_DS(ON) and 30%
higher power handling capability than SOT23 in
the same footprint
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S
SOT -23 ^TM
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Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
010X
MT2301
7’’
G
S
Ratings
–20
±12
–3.3
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2010 MOS-TECH Semiconductor Corporation
www.mtsemi.com
Rev.D