MSDT200 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Three Phase Bridge Thyristor

MSDT200
Three Phase Bridge
+ Thyristor
VRRM / VDRM 800 to 1600V
IFAV / ITAV
200Amp
Circuit
-
G
R2
R ST
Module Type
TYPE
MSDT200-08
MSDT200-12
MSDT200-16
Features
y Blocking voltage:800 to 1600V
y Three Phase Bridge and a Thyristor
y Low Forward Voltage
Applications
y Inverter for AC or DC motor control
y Current stablilzed power supply
y Switching power supply
y UL E243882 approved
VRRM / VDRM
800V
1200V
1600V
VRSM
900V
1300V
1700V
◆Diode
Maximum Ratings
Symbol
Item
ID
Output Current(D.C.)
IFSM Surge forward current
i²t
Circuit Fusing Consideration
Visol Isolation Breakdown Voltage(R.M.S)
Tvj Operating Junction Temperature
Tstg Storage Temperature
Mt
Mounting Torque
Mt
Ms
Weight
Thermal Characteristics
Symbol
Item
Rth(j-c) Thermal Impedance, max.
Rth(c-s) Thermal Impedance, max.
Conditions
Tc=96℃ Three phase full wave
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
To terminals(M4)
To terminals(M6)
To heatsink(M6)
Module（Approximately）
Conditions
Junction to Case(TOTAL)
Case to Heat sink
Electrical Characteristics
Symbol
Item
VFM Forward Voltage Drop, max.
IRRM
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ IF =200A
Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
Values
200
1900
18050
3000
-40 to +150
-40 to +125
2±15%
5±15%
5±15%
320
Units
A
A
A²s
V
℃
℃
Nm
Nm
Nm
g
Values
0.12
0.06
Units
℃/W
℃/W
Values
1.35
≤2
≤10
Units
V
mA
mA
Document Number: MSDT200
Jan.15,2015
1
www.smsemi.com