MBRT40020_THRU_MBRT40040R Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V_RRM
• Isolation Type Package
MBRT40020 thru MBRT40040R
V_RRM = 20 V - 100 V
I_F = 400 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions MBRT40020 (R) MBRT40030 (R) MBRT40035 (R) MBRT40040 (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 100 °C
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
20
14
20
400
3000
-40 to 150
-40 to 175
30
21
30
400
3000
-40 to 150
-40 to 175
35
25
35
400
3000
-40 to 150
-40 to 175
40
V
28
V
40
V
400
A
3000
A
-40 to 150
°C
-40 to 175
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions MBRT40020 (R) MBRT40030(R) MBRT40035 (R) MBRT40040 (R) Unit
Diode forward voltage
Reverse current
V_F I_F = 200 A, T_j = 25 °C
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
0.75
1
20
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.14
0.75
0.75
1
1
20
20
0.14
0.14
0.75
V
1
20
mA
0.14
°C/W
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