MBRT20045 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V_RRM
• Isolation Type Package
MBRT20045 thru MBRT200100R
V_RRM = 20 V - 100 V
I_F = 200 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions MBRT20045 (R) MBRT20060 (R) MBRT20080 (R) MBRT200100 (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 125 °C
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
45
32
45
200
1500
-40 to 150
-40 to 175
60
42
60
200
1500
-40 to 150
-40 to 175
80
57
80
200
1500
-40 to 150
-40 to 175
100
V
70
V
100
V
200
A
1500
A
-40 to 150
°C
-40 to 175
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions MBRT20045 (R) MBRT20060(R) MBRT20080 (R) MBRT200100 (R) Unit
Diode forward voltage
V_F I_F = 100 A, T_j = 25 °C
0.75
0.8
0.88
0.88
V
Reverse current
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
1
20
1
20
1
20
1
20
mA
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.18
0.18
0.18
0.18
°C/W
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