MBRH20045 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V_RRM
MBRH20045 thru MBRH200100R
V_RRM = 20 V - 100 V
I_F = 200 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH20045 (R) MBRH20060 (R) MBRH20080 (R) MBRH200100 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
V_RRM
V_RMS
V_DC
45
60
80
32
42
56
45
60
80
Continuous forward current
I_F
T_C ≤ 136 °C
200
200
200
100
V
70
V
100
V
200
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM T_C = 25 °C, t_p = 8.3 ms
3000
3000
3000
3000
A
Operating temperature
T_j
Storage temperature
T_stg
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH20045 (R) MBRH20060 (R) MBRH20080 (R) MBRH200100 (R) Unit
Diode forward voltage
Reverse current
V_F I_F = 200 A, T_j = 25 °C
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
0.65
5
250
Thermal characteristics
Thermal resistance, junction
- case
R_thJC
0.8
0.75
5
250
0.8
0.84
5
250
0.8
0.84
V
5
250
mA
0.8
°C/W
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