MBRH12020 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V_RRM
MBRH12020 thru MBRH12040R
V_RRM = 20 V - 100 V
I_F = 120 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
V_RRM
V_RMS
V_DC
20
30
35
40
V
14
21
25
28
V
20
30
35
40
V
Continuous forward current
I_F
T_C ≤ 136 °C
120
120
120
120
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM T_C = 25 °C, t_p = 8.3 ms
2000
2000
2000
2000
A
Operating temperature
T_j
Storage temperature
T_stg
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction
- case
V_F I_F = 120 A, T_j = 25 °C
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
R_thJC
0.65
4
250
0.8
0.65
4
250
0.8
0.65
4
250
0.8
0.65
V
4
250
mA
0.8
°C/W
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