MBR40045CT Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V_RRM
MBR40045CT thru MBR400100CTR
V_RRM = 20 V - 100 V
I_F = 400 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol Conditions MBR40045CT (R) MBR40060CT (R) MBR40080CT (R) MBR400100CT (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward
current
Surge non-repetitive
forward current, Half
Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 125 °C
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
45
32
45
400
3000
-40 to 175
-40 to 175
60
42
60
400
3000
-40 to 175
-40 to 175
80
56
80
400
3000
-40 to 175
-40 to 175
100
V
70
V
100
V
400
A
3000
A
-40 to 175
°C
-40 to 175
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions MBR40045CT (R) MBR40060CT (R) MBR40080CT (R) MBR400100CT (R) Unit
Diode forward voltage
V_F I_F = 200 A, T_j = 25 °C
0.65
0.8
Reverse current
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
5
200
5
200
Thermal characteristics
Thermal resistance,
junction - case
R_thJC
0.35
0.35
0.84
5
200
0.35
0.84
V
5
200
mA
0.35
°C/W
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