MBR12045CT Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 100 V V_RRM
MBR12045CT thru MBR120100CTR
V_RRM = 20 V - 100 V
I_F = 120 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol Conditions MBR12045CT (R) MBR12060CT (R) MBR12080CT (R) MBR120100CT (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward
current
Surge non-repetitive
forward current, Half
Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 140 °C
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
45
32
45
120
800
-40 to 175
-40 to 175
60
42
60
120
800
-40 to 175
-40 to 175
80
56
80
120
800
-40 to 175
-40 to 175
100
V
70
V
100
V
120
A
800
A
-40 to 175
°C
-40 to 175
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions MBR12045CT (R) MBR12060CT (R) MBR12080CT (R) MBR120100CT (R) Unit
Diode forward voltage
Reverse current
V_F I_F = 60 A, T_j = 25 °C
I_R
V_R = 20 V, T_j = 25 °C
V_R = 20 V, T_j = 125 °C
0.65
3
200
0.75
3
200
Thermal characteristics
Thermal resistance,
junction - case
R_thJC
0.8
0.8
0.84
3
200
0.8
0.84
V
3
200
mA
0.8
°C/W
www.genesicsemi.com
1