KVR16LSE11-8HB Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 8GB 2Rx8 1G x 72-Bit PC3L-12800

Memory Module Specifications
KVR16LSE11/8HB
8GB 2Rx8 1G x 72-Bit PC3L-12800
CL11 204-Pin ECC SODIMM
DESCRIPTION
This document describes ValueRAM's 1G x 72-bit (8GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, ECC,
low voltage, memory module, based on eighteen 512M x 8-bit
FBGA components. The SPD is programmed to JEDEC stan-
dard latency DDR3-1600 timing of 11-11-11 at 1.35V and
backwards compatible at 1.5V. This 204-pin SODIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5, 6, 7, 8, 9, 10, 11
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• With Integrated Onboard Temperature Sensor EEPROM
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
11 cycles
48.125ns (min.)
260ns (min.)
35ns (min.)
(1.35V) = 1.56 W*
94 V - 0
0^o C to 85^o C
-55^o C to +100^o C
*Power will vary depending on the SDRAM.
SDRAM SUPPORTED
Hynix (B-Die)
Continued >>
Document No. VALUERAM1464-001.A00 04/01/15 Page 1